OPTIMIZATION OF THE PROXIMITY PARAMETERS FOR THE ELECTRON-BEAM EXPOSURE OF NANOMETER GATE-LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：7

作者：

PATRICK, W ^{[1
]}

VETTIGER, P ^{[1
]}

机构：

[1] IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2037 / 2041

页数：5

共 15 条

[1] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[2]

CHANG THP, 1976, 7TH P INT C EL ION B, P392

[3] 0.1-MU SCALE LITHOGRAPHY USING A CONVENTIONAL ELECTRON-BEAM SYSTEM [J].

DIX, C ;

FLAVIN, PG ;

HENDY, P ;

JONES, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :131-135

[4]

GROBMAN WD, 1978, 8TH P INT C EL ION B, P276

[5] 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER [J].

HARDER, CS ;

VANZEGHBROECK, B ;

MEIER, H ;

PATRICK, W ;

VETTIGER, P .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :171-173

[6] BEAM ENERGY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY - THE RANGE AND INTENSITY OF BACKSCATTERED EXPOSURE [J].

JACKEL, LD ;

HOWARD, RE ;

MANKIEWICH, PM ;

CRAIGHEAD, HG ;

EPWORTH, RW .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :698-700

[7] SCALED GAAS-MESFETS WITH GATE LENGTH DOWN TO 100 NM [J].

JAECKEL, H ;

GRAF, V ;

VANZEGHBROECK, BJ ;

VETTIGER, P ;

WOLF, P .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :522-524

[8]

Machida Y., 1984, Microelectronic Engineering, V2, P245, DOI 10.1016/0167-9317(84)90004-2

[9]

MACKIE S, 1985, SOLID STATE TECHNOL, V28, P117

[10] ENERGY DEPOSITION FUNCTIONS IN ELECTRON RESIST FILMS ON SUBSTRATES [J].

PARIKH, M ;

KYSER, DF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1104-1111

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