OXIDATION OF SI SUBSTRATE DURING AL EVAPORATION

被引：2

作者：

IWATA, S ^{[1
]}

NAKATA, K ^{[1
]}

KIKUCHI, A ^{[1
]}

机构：

[1] HITACHI LTD, CTR DEVICE DEV, KODAIRA, JAPAN

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1986年 / 50卷 / 03期

关键词：

D O I：

10.2320/jinstmet1952.50.3_287

中图分类号：

学科分类号：

摘要：

引用

页码：287 / 292

页数：6

共 7 条

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[6] ELECTRON-TRANSPORT ACROSS ALUMINUM ULTRATHIN SILICON-OXIDE PHOSPHORUS IMPLANTED SILICON BARRIERS [J].

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[7]

KIKUCHI A, 1983, JPN J APPL PHYS, V22, P577

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