GROWTH OF GAAS/ALGAAS QUANTUM-WELL STRUCTURES USING A LARGE-SCALE MOCVD REACTOR

被引：8

作者：

OCHI, S

HAYAFUJI, N

KAJIKAWA, Y

MIZUGUCHI, K

MUROTANI, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90351-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：553 / 557

页数：5

相关论文

共 6 条

[1] ABRUPT OMVPE GROWN GAAS/GAALAS HETEROJUNCTIONS [J].

HERSEE, SD ;

KRAKOWSKI, M ;

BLONDEAU, R ;

BALDY, M ;

DECREMOUX, B ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :383-388

[2] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :463-467

[3] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J].

MILLER, RC ;

KLEINMAN, DA ;

TSANG, WT ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1981, 24 (02) :1134-1136

[4] EXTREMELY UNIFORM GROWTH OF GAAS AND GAALAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON 3-INCH GAAS SUBSTRATES [J].

OKAMOTO, A ;

SUNAKAWA, H ;

TERAO, H ;

WATANABE, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :140-144

[5] FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS [J].

ROBERTS, JS ;

MASON, NJ ;

ROBINSON, M .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :422-430

[6] AIGAAS/GAAS 2-DEG FETS FABRICATED FROM MO-CVD WAFERS [J].

TAKANASHI, Y ;

KOBAYASHI, N .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :154-156