TOP-ILLUMINATED INGAAS/INP P-I-N PHOTODIODES WITH A 3-DB BANDWIDTH IN EXCESS OF 26 GHZ

被引：18

作者：

WAKE, D

BLANK, LC

WALLING, RH

HENNING, ID

机构：

[1] British Telecommunications Research, Lab, Ipswich, Engl, British Telecommunications Research Lab, Ipswich, Engl

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

Semiconducting gallium arsenide - SEMICONDUCTING INDIUM COMPOUNDS - Growth - Substrates;

D O I：

10.1109/55.698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Top-illuminated InGaAs p-i-n photodiodes have been fabricated from metal organic vapor-phase epitaxy (MOVPE) material, grown on semi-insulating InP substrates. A flat frequency response to 26 GHz has been measured, which is the highest figure yet reported for such devices. The predicted 3-dB bandwidth of these devices is 35 GHz.

引用

页码：226 / 228

页数：3

共 6 条

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