NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE

被引：4

作者：

CHAKRABARTI, P ^{[1
]}

CHOUDHURY, SC ^{[1
]}

PAL, BB ^{[1
]}

机构：

[1] BANARAS HINDU UNIV,INST TECHNOL,DEPT ELECTR ENGN,VARANASI 221005,UTTAR PRADESH,INDIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 04期

关键词：

D O I：

10.1007/BF00618894

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：331 / 334

页数：4

共 14 条

[1] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205

[2] ALLOY CLUSTERING AND ITS EFFECT ON IMPACT IONIZATION IN TERNARY III-V COMPOUNDS [J].

BURROUGHS, MS ;

HESS, K ;

HOLONYAK, N ;

LAIDIG, WD ;

STILLMAN, GE .

SOLID-STATE ELECTRONICS, 1982, 25 (02) :161-167

[3] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

CAPASSO, F ;

TSANG, WT ;

WILLIAMS, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390

[4] BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J].

CAPASSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :457-461

[5] NEW MULTILAYER AND GRADED GAP OPTOELECTRONIC AND HIGH-SPEED DEVICES BY BAND-GAP ENGINEERING [J].

CAPASSO, F .

SURFACE SCIENCE, 1984, 142 (1-3) :513-528

[6] A NEW INFRARED AVALANCHE PHOTODIODE FOR LONG-DISTANCE FIBER OPTIC COMMUNICATION [J].

CHAKRABARTI, P ;

PAL, BB .

SOLID-STATE ELECTRONICS, 1988, 31 (01) :1-3

[7] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[8]

MATSUO K, 1985, IEEE T EDUC, V32, P2165

[9] EFFECTS OF TIME-DEPENDENCE OF MULTIPLICATION PROCESS ON AVALANCHE NOISE [J].

NAQVI, IM .

SOLID-STATE ELECTRONICS, 1973, 16 (01) :19-28

[10] THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE [J].

PAL, BB ;

CHAKRABARTI, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (03) :173-177

← 1 2 →