A TRAPPING MECHANISM FOR AUTODOPING IN SILICON EPITAXY .1. THEORY

被引：16

作者：

WONG, M ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / 88

页数：6

共 13 条

[1]

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[2]

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[3] TRANSIENTS IN THE DEPOSITION OF SILICON EPITAXIAL-FILMS IN A CVD-REACTOR [J].

REIF, R ;

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[4] TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH [J].

REIF, R ;

KAMINS, TI ;

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[5] COMPUTER-SIMULATION IN SILICON EPITAXY [J].

REIF, R ;

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[6] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY [J].

REIF, R ;

KAMINS, TI ;

SARASWAT, KC .

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[7] AUTODOPING EFFECTS IN SILICON EPITAXY [J].

SRINIVASAN, GR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1334-1342

[8] KINETICS OF LATERAL AUTO-DOPING IN SILICON EPITAXY [J].

SRINIVASAN, GR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :146-151

[9] A MODEL FOR THE LATERAL VARIATION OF AUTODOPING IN EPITAXIAL-FILMS [J].

SRINIVASAN, GR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :558-561

[10] FLOW EFFECTS IN EPITAXIAL AUTODOPING [J].

SRINIVASAN, GR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4824-4829

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