RIKEN 200 KV HIGH-CURRENT IMPLANTER FOR METAL-SURFACE MODIFICATION

被引：10

作者：

IWAKI, M

YOSHIDA, K

SAKUDO, N

SATOU, S

机构：

[1] OPELECS,KAWAGOE,SAITAMA 350,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90609-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：51 / 55

页数：5

共 6 条

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CAROSELLA, CA ;

HUBLER, GK .

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[2] ANNEALING AND ROLLING BEHAVIORS OF CONCENTRATION PROFILES OF CR AND CU IMPLANTED INTO MILD-STEEL [J].

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SODA, N ;

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YUKAWA, K .

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[3] SURFACE-LAYER CHARACTERISTICS OF ION-IMPLANTED METALS [J].

IWAKI, M .

THIN SOLID FILMS, 1983, 101 (03) :223-231

[4] SPUTTERING OBSERVATIONS DURING BINARY ALLOY PRODUCTION BY ION-IMPLANTATION [J].

REYNOLDS, GW ;

KNUDSON, AR ;

GOSSETT, CR .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :179-185

[5] MICROWAVE ION-SOURCE FOR HIGH-CURRENT IMPLANTER [J].

SAKUDO, N ;

TOKIGUCHI, K ;

KOIKE, H ;

KANOMATA, I .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (07) :940-943

[6]

SAKUDO N, 1984, VACUUM, V34, P245, DOI 10.1016/0042-207X(84)90136-2

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