INVESTIGATION OF THE LOW-FREQUENCY DISPERSION OF INP-OXIDE USING A NEW COLE-COLE DOUBLE-ARC DISTRIBUTION

被引：11

作者：

ALREFAIE, SN

机构：

[1] Department of Engineering, Mutah University, Karak

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 05期

关键词：

73.40.Qv; 73.40.Rw; 73.60.Hy;

D O I：

10.1007/BF00348383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new relaxation time distribution has been developed for double arc Cole-Cole plots in order to study the dispersion relation of InP-oxide. As suggested by a carrier injection model, the low frequency dispersion most likely originates from remaining In at the interface. The presence of In is a direct consequence of the Al electrode formation where the vapor-deposited electrode reacts with the InPO4. © 1990 Springer-Verlag.

引用

页码：419 / 422

页数：4

共 12 条

[1] DIELECTRIC AND INTERFACIAL PROPERTIES OF INP PLASMA-GROWN OXIDES [J].