SPECTRAL PROPERTIES OF PHOTOCURRENT FLUCTUATIONS IN AVALANCHE PHOTODIODES

被引:5
作者
KAHRAMAN, G [1 ]
SALEH, BEA [1 ]
TEICH, MC [1 ]
机构
[1] COLUMBIA UNIV,DEPT ELECT ENGN,CTR TELECOMMUN RES,NEW YORK,NY 10027
基金
美国国家科学基金会;
关键词
D O I
10.1109/50.134199
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We provide a stochastic model that describes the time dynamics of double-carrier multiplication in an avalanche photodiode (APD) and obtain the autocorrelation function and the spectral characteristics of the photoelectric current. The photoelectric pulse generated by an APD as a result of a single injected photoelectron is regarded as a nonstationary random function of time (the impulse response function). A discrete stochastic model for the electron/hole motion and multiplication is defined on a spatio-temporal lattice and used to derive recursive equations for the mean, the variance, and the autocorrelation of the impulse response as functions of time. Correlation properties of the impulse response are studied for a conventional and a multilayer (superlattice) APD with the same mean gain and carrier-ionization rate ratio. The power spectral density of the photocurrent in response to a Poisson-distributed stream of photons of uniform rate is evaluated.
引用
收藏
页码:458 / 468
页数:11
相关论文
共 41 条
[1]   THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].
BRENNAN, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205
[2]   COMPARISON OF MULTIQUANTUM WELL, GRADED BARRIER, AND DOPED QUANTUM-WELL GAINAS-ALINAS AVALANCHE PHOTODIODES - A THEORETICAL APPROACH [J].
BRENNAN, KF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (08) :1273-1282
[3]   THEORY OF THE TEMPORAL RESPONSE OF A SIMPLE MULTIQUANTUM-WELL AVALANCHE PHOTODIODE [J].
BRENNAN, KF ;
WANG, Y ;
TEICH, MC ;
SALEH, BEA ;
KHORSANDI, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1456-1467
[4]   MULTIPLICATION NOISE OF WIDE-BANDWIDTH INP/INGAASP/INGAAS AVALANCHE PHOTODIODES [J].
CAMPBELL, JC ;
CHANDRASEKHAR, S ;
TSANG, WT ;
QUA, GJ ;
JOHNSON, BC .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (03) :473-478
[5]   HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].
CAMPBELL, JC ;
DENTAI, AG ;
HOLDEN, WS ;
KASPER, BL .
ELECTRONICS LETTERS, 1983, 19 (20) :818-820
[6]   NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE [J].
CHAKRABARTI, P ;
CHOUDHURY, SC ;
PAL, BB .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (04) :331-334
[7]  
CHAKRABARTI P, 1987, APPL PHYS A, V42, P173
[8]   FREQUENCY RESPONSE OF PIN AVALANCHING PHOTODIODES [J].
CHANG, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :139-+
[9]   FREQUENCY RESPONSE OF AVALANCHING PHOTODIODES [J].
EMMONS, RB ;
LUCOVSKY, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) :297-+
[10]   AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J].
EMMONS, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3705-+