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THEORY OF THE TEMPORAL RESPONSE OF A SIMPLE MULTIQUANTUM-WELL AVALANCHE PHOTODIODE
被引:19
作者
:
BRENNAN, KF
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, KF
WANG, Y
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
WANG, Y
TEICH, MC
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
TEICH, MC
SALEH, BEA
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
SALEH, BEA
KHORSANDI, T
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
KHORSANDI, T
机构
:
[1]
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
[2]
COLUMBIA UNIV,CTR TELECOMMUN RES,DEPT ELECT ENGN,NEW YORK,NY 10027
[3]
UNIV WISCONSIN,DEPT ELECT & COMP ENGN,MADISON,WI 53706
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1988年
/ 35卷
/ 09期
关键词
:
D O I
:
10.1109/16.2578
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1456 / 1467
页数:12
相关论文
共 35 条
[1]
[Anonymous], 1977, SEMICONDUCTORS SEMIM
[2]
SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES
[J].
BLAUVELT, H
论文数:
0
引用数:
0
h-index:
0
BLAUVELT, H
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
ELECTRONICS LETTERS,
1982,
18
(09)
:375
-376
[3]
THE P-N HETEROJUNCTION QUANTUM-WELL APD - A NEW HIGH-GAIN LOW-NOISE HIGH-SPEED PHOTODETECTOR SUITABLE FOR LIGHTWAVE COMMUNICATIONS AND DIGITAL APPLICATIONS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(04)
:793
-803
[4]
THEORY OF THE GAINAS/ALINAS-DOPED QUANTUM-WELL APD - A NEW LOW-NOISE SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATION-SYSTEMS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(11)
:1683
-1695
[5]
THE P-N-JUNCTION QUANTUM-WELL APD - A NEW SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATIONS-SYSTEMS AND ON-CHIP DETECTOR APPLICATIONS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(04)
:782
-792
[6]
THEORY OF THE DOPED QUANTUM-WELL SUPERLATTICE APD - A NEW SOLID-STATE PHOTOMULTIPLIER
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
BRENNAN, K
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(10)
:1999
-2016
[7]
THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
BRENNAN, K
;
WANG, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WANG, T
;
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, K
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(04)
:199
-201
[8]
THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(11)
:2197
-2205
[9]
PHYSICS OF THE ENHANCEMENT OF IMPACT IONIZATION IN MULTIQUANTUM WELL STRUCTURES
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
;
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
HESS, K
;
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
CAPASSO, F
.
APPLIED PHYSICS LETTERS,
1987,
50
(26)
:1897
-1899
[10]
THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(10)
:1502
-1510
←
1
2
3
4
→
共 35 条
[1]
[Anonymous], 1977, SEMICONDUCTORS SEMIM
[2]
SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES
[J].
BLAUVELT, H
论文数:
0
引用数:
0
h-index:
0
BLAUVELT, H
;
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
;
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
.
ELECTRONICS LETTERS,
1982,
18
(09)
:375
-376
[3]
THE P-N HETEROJUNCTION QUANTUM-WELL APD - A NEW HIGH-GAIN LOW-NOISE HIGH-SPEED PHOTODETECTOR SUITABLE FOR LIGHTWAVE COMMUNICATIONS AND DIGITAL APPLICATIONS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(04)
:793
-803
[4]
THEORY OF THE GAINAS/ALINAS-DOPED QUANTUM-WELL APD - A NEW LOW-NOISE SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATION-SYSTEMS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(11)
:1683
-1695
[5]
THE P-N-JUNCTION QUANTUM-WELL APD - A NEW SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATIONS-SYSTEMS AND ON-CHIP DETECTOR APPLICATIONS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(04)
:782
-792
[6]
THEORY OF THE DOPED QUANTUM-WELL SUPERLATTICE APD - A NEW SOLID-STATE PHOTOMULTIPLIER
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
BRENNAN, K
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1986,
22
(10)
:1999
-2016
[7]
THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
BRENNAN, K
;
WANG, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
WANG, T
;
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, K
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(04)
:199
-201
[8]
THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(11)
:2197
-2205
[9]
PHYSICS OF THE ENHANCEMENT OF IMPACT IONIZATION IN MULTIQUANTUM WELL STRUCTURES
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
BRENNAN, K
;
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
HESS, K
;
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
CAPASSO, F
.
APPLIED PHYSICS LETTERS,
1987,
50
(26)
:1897
-1899
[10]
THEORETICAL-STUDY OF MULTIQUANTUM WELL AVALANCHE PHOTODIODES MADE FROM THE GAINAS ALINAS MATERIAL SYSTEM
[J].
BRENNAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
BRENNAN, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1986,
33
(10)
:1502
-1510
←
1
2
3
4
→