THEORY OF THE DOPED QUANTUM-WELL SUPERLATTICE APD - A NEW SOLID-STATE PHOTOMULTIPLIER

被引：31

作者：

BRENNAN, K

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 10期

关键词：

D O I：

10.1109/JQE.1986.1072895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1999 / 2016

页数：18

共 33 条

[1]

[Anonymous], 1977, SEMICONDUCTORS SEMIM

[2] SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES [J].

BLAUVELT, H ;

MARGALIT, S ;

YARIV, A .

ELECTRONICS LETTERS, 1982, 18 (09) :375-376

[3] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP [J].

BRENNAN, K ;

HESS, K .

PHYSICAL REVIEW B, 1984, 29 (10) :5581-5590

[4] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN AL0.45GA0.55AS [J].

BRENNAN, K ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :964-966

[5] THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS [J].

BRENNAN, K ;

WANG, T ;

HESS, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :199-201

[6] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205

[7] THEORY OF THE CHANNELING AVALANCHE PHOTODIODE [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2467-2478

[8]

BRENNAN K, UNPUB SURF SCI

[9] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].

BULMAN, GE ;

ROBBINS, VM ;

BRENNAN, KF ;

HESS, K ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[10] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

← 1 2 3 4 →