PHYSICS OF THE ENHANCEMENT OF IMPACT IONIZATION IN MULTIQUANTUM WELL STRUCTURES

被引：20

作者：

BRENNAN, K

HESS, K

CAPASSO, F

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[4] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期

关键词：

D O I：

10.1063/1.97679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1897 / 1899

页数：3

共 17 条

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BRENNAN, K .

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[2] THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS [J].

BRENNAN, K ;

WANG, T ;

HESS, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :199-201

[3] THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].

BRENNAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205

[4] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].

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ROBBINS, VM ;

BRENNAN, KF ;

HESS, K ;

STILLMAN, GE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185

[5] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[6] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].

CAPASSO, F ;

TSANG, WT ;

WILLIAMS, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390

[7]

CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1

[8] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[9]

HESS K, 1985, TOP APPL PHYS, V58, P201

[10] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES [J].

JUANG, FY ;

DAS, U ;

NASHIMOTO, Y ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :972-974

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