COMPARISON OF MULTIQUANTUM WELL, GRADED BARRIER, AND DOPED QUANTUM-WELL GAINAS-ALINAS AVALANCHE PHOTODIODES - A THEORETICAL APPROACH

被引：8

作者：

BRENNAN, KF ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 08期

关键词：

D O I：

10.1109/JQE.1987.1073513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1273 / 1282

页数：10

共 39 条

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