EFFECTS OF TITANIUM LAYER AS DIFFUSION BARRIER IN TI/PT/AU BEAM LEAD METALLIZATION ON POLYSILICON

被引:8
作者
KANAMORI, S
SUDO, H
机构
来源
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1982年 / 5卷 / 03期
关键词
D O I
10.1109/TCHMT.1982.1135973
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:318 / 321
页数:4
相关论文
共 8 条
[1]   INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].
EVERSTEY.FC ;
PUT, BH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :106-110
[2]   LOCALIZED PLATINUM SILICIDE GROWTH CAUSING TI/PT/AU BEAM LEAD METALLIZATION INSTABILITY [J].
KANAMORI, S .
THIN SOLID FILMS, 1982, 92 (1-2) :L67-L68
[4]   BEAM-LEAD TECHNOLOGY [J].
LEPSELTE.MP .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&
[5]  
PECK DS, 1969, 1969 P ANN REL S CHI, P191
[6]   STEPPED ELECTRODE TRANSISTOR - SET [J].
SAKAI, T ;
SUNOHARA, Y ;
SAKAKIBARA, Y ;
MUROTA, J .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :43-46
[7]  
YASUDA Y, 1973, SEMICONDUCTOR SILICO, P271
[8]  
YASUDA Y, 1972, EXTENDED ABS, V72, P69