SCHOTTKY-BARRIER FORMATION BETWEEN POLYPYRROLE AND CRYSTALLINE AND AMORPHOUS HYDROGENATED SILICON

被引:33
作者
INGANAS, O
SKOTHEIM, T
LUNDSTROM, I
机构
来源
PHYSICA SCRIPTA | 1982年 / 25卷 / 06期
关键词
D O I
10.1088/0031-8949/25/6A/053
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:863 / 867
页数:5
相关论文
共 17 条
[1]   (SN)X-GAAS POLYMER-SEMICONDUCTOR SOLAR-CELLS [J].
COHEN, MJ ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1978, 33 (09) :812-814
[2]  
DELAHOY AE, J APPL PHYS
[3]   INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES [J].
DENEUVILLE, A ;
BRODSKY, MH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1414-1421
[4]  
Hovel HJ, 1975, SEMICONDUCTORS SEMIM, VII
[5]   POLYPYRROLE - AN ELECTROCHEMICALLY SYNTHESIZED CONDUCTING ORGANIC POLYMER [J].
KANAZAWA, KK ;
DIAZ, AF ;
GILL, WD ;
GRANT, PM ;
STREET, GB ;
GARDINI, GP .
SYNTHETIC METALS, 1980, 1 (03) :329-336
[6]   CURRENT TRANSPORT MECHANISM OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].
MISHIMA, Y ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :593-596
[7]   THE INFLUENCE OF ADSORBED LAYERS IN CONTROLLING SCHOTTKY BARRIERS [J].
MONTGOMERY, V ;
WILLIAMS, RH ;
SRIVASTAVA, GP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (08) :L191-L194
[8]   PROTECTION OF N-GAAS PHOTOANODES WITH PHOTOELECTROCHEMICALLY GENERATED POLYPYRROLE FILMS [J].
NOUFI, R ;
TENCH, D ;
WARREN, LF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2310-2311
[9]   STABILIZATION OF N-TYPE SILICON PHOTOELECTRODES TO SURFACE OXIDATION IN AQUEOUS-ELECTROLYTE SOLUTION AND MEDIATION OF OXIDATION REACTION BY SURFACE-ATTACHED ORGANIC CONDUCTING POLYMER [J].
NOUFI, R ;
FRANK, AJ ;
NOZIK, AJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (07) :1849-1850
[10]   HIGHLY ELECTRONEGATIVE METALLIC CONTACTS TO SEMICONDUCTORS USING POLYMERIC SULFUR NITRIDE [J].
SCRANTON, RA ;
MOONEY, JB ;
MCCALDIN, JO ;
MCGILL, TC ;
MEAD, CA .
APPLIED PHYSICS LETTERS, 1976, 29 (01) :47-48