ELECTRICAL CHARACTERIZATION OF IODINE DOPED MOLECULAR-BEAM EPITAXIAL ZNSE

被引：14

作者：

WALLACE, JM

SIMPSON, J

WANG, SY

STEWART, H

HUNTER, JJ

ADAMS, SJA

PRIOR, KA

CAVENETT, BC

机构：

[1] Department of Physics, Heriot Watt University, Riccarton, Edinburgh

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90767-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 10(16) to 10(19) cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe.

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页码：320 / 323

页数：4

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