RAPID THERMAL AND LARGE-AREA PROCESSING OF THIN-FILMS WITH A LINE ELECTRON-BEAM

被引：7

作者：

PAULI, M

DAHN, G

MULLER, J

DOSCHER, M

机构：

[1] Technical University Hamburg-Harburg, D-2100 Hamburg 90

来源：

APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90541-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rapid thermal and large area processing with a line electron beam has been used for the recrystallization of silicon films on graphite substrates and for the hetero-epitaxial growth of beta-FeSi2 films on (111) silicon wafers. A method has been developed to calculate the differential power of the line electron beam along the line direction from the measured beam profile. This differential power in conjunction with the FWHM of the beam profile determines the characteristics of the line heat source in the thin film. Using these parameters the temperature distribution in the thin film was simulated numerically.

引用

页码：398 / 402

页数：5

共 10 条

[1] INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON [J].