COMPARISON OF LASER AND LINE-ELECTRON BEAM RECRYSTALLIZATION OF THIN POLYCRYSTALLINE SILICON FILMS

被引：5

作者：

PAULI, M

DAHN, G

MULLER, J

机构：

[1] Institute of Semiconductor Technology, Technical University Hamburg-Harburg, 2100 Hamburg 90

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90076-A

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A zone-melting-recrystallization process (ZMR) for thin silicon films was realized using an argon ion laser with high power density as well as a line-electron beam with significantly lower power density. The temperature distribution in a multilayer structure suitable for the ZMR was simulated numerically. Appropriate process parameters are in good agreement with experiment.

引用

页码：386 / 391

页数：6

共 10 条

[1] AN ANALYSIS OF THE PROCESS OF RECRYSTALLIZATION OF SILICON THIN-FILMS WITH EITHER A SCANNING LASER OR STRIP HEATER [J].