INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON

被引：3

作者：

BORISENKO, VE

GRIBKOVSKII, VV

LABUNOV, VA

SAMUILOV, VA

YASHIN, KD

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 75卷 / 01期

关键词：

D O I：

10.1002/pssa.2210750112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：117 / 120

页数：4

共 20 条

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