ELLIPSOMETRIC STUDIES OF ADSORPTION REACTIONS ON CLEAN SURFACES

被引：40

作者：

MEYER, F ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1976年 / 56卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90432-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：37 / 48

页数：12

共 33 条

[1] HIGH-RESOLUTION ELECTROREFLECTANCE MEASUREMENTS OF GAAS
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[J]. SURFACE SCIENCE, 1973, 37 (01) : 631 - 638
[2] ELLIPSOMETRY IN SUB-MONOLAYER REGION
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[J]. SURFACE SCIENCE, 1969, 14 (01) : 52 - &
[3] ELLIPSOMETRY-LEED STUDY OF ADSORPTION OF OXYGEN ON (011) TUNGSTEN
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MELMED, AJ
[J]. SURFACE SCIENCE, 1969, 16 : 251 - &
[4] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
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CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[5] OPTICAL-ABSORPTION OF SURFACE STATES AT SI(111)7X7
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[J]. SURFACE SCIENCE, 1975, 49 (01) : 315 - 317
[6] OXYGEN-INDUCED FRANZ-KELDYSH EFFECT AND SURFACE STATES ON GAAS(110) SURFACES IN ELLIPSOMETRY
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LUTH, H
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (17) : 1024 - 1027
[7] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[8] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[9] ADSORPTION STUDIES BY ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY
FEUERBACHER, B
[J]. SURFACE SCIENCE, 1975, 47 (01) : 115 - 123
[10] SURFACE OPTICAL-CONSTANTS OF SILICON AND GERMANIUM DERIVED FROM ELECTRON-ENERGY-LOSS SPECTROSCOPY
FROITZHEIM, H
IBACH, H
MILLS, DL
[J]. PHYSICAL REVIEW B, 1975, 11 (12): : 4980 - 4988

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