DEPENDENCE OF NET GAIN OF BURIED LASER ON MIRROR LOSS

被引:4
作者
TAKAHASHI, S [1 ]
KOBAYASHI, T [1 ]
FURUKAWA, Y [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.15.395
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:395 / 396
页数:2
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共 8 条
  • [1] BROSSON P, 1974, APPL PHYS LETT, V23, P94
  • [2] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
    HAKKI, BW
    PAOLI, TL
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119
  • [3] IKEGAMI T, 1972, OYO BUTURI, V41, P916
  • [4] KAWAKAMI T, 1975, JPN J APPL PHYS, V14, P419
  • [5] DARK LINE LOSS IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS
    KOBAYASHI, T
    FURUKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) : 1175 - 1181
  • [6] SATURATION OF OPTICAL ABSORPTION IN GAAS
    MICHEL, AE
    NATHAN, MI
    [J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 101 - &
  • [7] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
    TSUKADA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4899 - 4906
  • [8] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE PLANAR STRIPE LASER
    YONEZU, H
    SAKUMA, I
    KOBAYASH.K
    KAMEJIMA, T
    UENO, M
    NANNICHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1585 - 1592