DARK LINE LOSS IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS

被引：5

作者：

KOBAYASHI, T ^{[1
]}

FURUKAWA, Y ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 08期

关键词：

D O I：

10.1143/JJAP.14.1175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1175 / 1181

页数：7

共 9 条

[1] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
DELOACH, BC
HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[2] DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND EFFICIENCY ON FABRY-PEROT CAVITY PARAMETERS - SINGLE HETEROJUNCTION (ALGA)AS-GAAS LASER-DIODES
ETTENBERG, M
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1204 - +
[3] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119
[4] OPTICAL-ABSORPTION AT DARK LINES IN DEGRADED DOUBLE-HETEROSTRUCTURE LASERS
KOBAYASHI, T
SEKI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 516 - 520
[5] VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES
NANNICHI, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3009 - &
[6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS
PINKAS, E
HAYASHI, I
MILLER, BI
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2827 - &
[7] MODE REFLECTIVITY ANS WAVEGUIDE PROPERTIES OF DOUBLE-HETEROSTRUCTUREINJECTION LASERS
REINHART, FK
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4466 - &
[8] LASING CHARACTERISTICS IN A DEGRADED GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASER
YONEZU, H
UENO, M
KAMEJIMA, T
SAKUMA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) : 835 - 842
[9] YONEZU H, 1974, JPN SOC APPL PHYS S, V43, P59

← 1 →