EXCIMER LASER INITIATED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS ON SILICON DIOXIDE

被引：27

作者：

SHINTANI, A ^{[1
]}

TSUZUKU, S ^{[1
]}

NISHITANI, E ^{[1
]}

NAKATANI, M ^{[1
]}

机构：

[1] HITACHI LTD, PROD ENGN RES LAB, TOTSUKA, YOKOHAMA 244, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2365 / 2373

页数：9

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[2]

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[5]

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[6] COMPARISON OF LASER-INITIATED AND THERMAL CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FILMS [J].

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RATHMAN, DD .

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[7] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].

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[8]

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[9]

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[10]

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