共 18 条
[1]
BALLANDUFRANCAIS C, 1979, BIOL CELLULAIRE, V36, P51
[3]
EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES
[J].
PHYSICAL REVIEW B,
1973, 8 (10)
:4734-4745
[4]
EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE
[J].
PHYSICAL REVIEW B,
1972, 5 (04)
:1440-&
[7]
THE RAMAN MICROPROBE - A QUANTITATIVE ANALYTICAL TOOL TO CHARACTERIZE LASER-PROCESSED SEMICONDUCTORS
[J].
IEEE CIRCUITS & DEVICES,
1986, 2 (01)
:37-42
[9]
TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 1 (02)
:638-&
[10]
EFFICIENT INTRACAVITY LASER RAMAN SPECTROMETER
[J].
APPLIED SPECTROSCOPY,
1978, 32 (03)
:298-302