HALF-IMPLICIT DIFFERENCE SCHEME FOR NUMERICAL-SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR-DEVICES

被引：14

作者：

POLSKY, BS

RIMSHANS, JS

机构：

[1] Latvian State Univ, Riga, USSR, Latvian State Univ, Riga, USSR

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 03期

关键词：

D O I：

10.1016/0038-1101(86)90211-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A half-implicit, absolutely stable difference scheme for numerical solution of the fundamental equations which describe the transient processes in semiconductor devices is proposed. The calculations of transient processes in a transistor device and I**2L device illustrate the potential of the method.

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收藏

页码：321 / 328

页数：8

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