DETECTION OF DEFECT STRUCTURES IN ARSENIC ION-IMPLANTED SILICON BY FLUORINE DECORATION

被引：11

作者：

PRUSSIN, S ^{[1
]}

MARGOLESE, DI ^{[1
]}

TAUBER, RN ^{[1
]}

HEWITT, WB ^{[1
]}

机构：

[1] TRW ENERGY DEV GRP,REDONDO BEACH,CA 90278

来源：

关键词：

D O I：

10.1063/1.334067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 923

页数：9

共 23 条

[1] BRICE DK, 1975, ION IMPLANTATION RAN, V1
[2] COLBY JW, 1973, 11 ANN P REL PHYS 19, P194
[3] CSEGREGI L, 1976, APPL PHYS LETT, V29, P92
[4] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195
[5] DAVIDSON SM, 1970, 1970 P EUR C ION IMP, P238
[6] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON
DROSD, R
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403
[7] GIBBONS JF, 1975, PROJECTED RANGE STAT
[8] REDISTRIBUTION OF IMPLANTED OXYGEN AND CARBON IN SILICON
KOYAMA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3202 - 3205
[9] LEIBEL H, 1975, J VAC SCI TECH, V12, P385
[10] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
ORMOND, R
FURMAN, BK
EVANS, CA
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 413 - 415