DETECTION OF DEFECT STRUCTURES IN ARSENIC ION-IMPLANTED SILICON BY FLUORINE DECORATION

被引：11

作者：

PRUSSIN, S ^{[1
]}

MARGOLESE, DI ^{[1
]}

TAUBER, RN ^{[1
]}

HEWITT, WB ^{[1
]}

机构：

[1] TRW ENERGY DEV GRP,REDONDO BEACH,CA 90278

来源：

关键词：

D O I：

10.1063/1.334067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 923

页数：9

共 23 条

[11] REDISTRIBUTION OF OXYGEN WITHIN DAMAGE REGIONS OF BORON-IMPLANTED SILICON
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
FURMAN, B
EVANS, CA
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 260 - 262
[12] Masters B. J., 1970, Radiation Effects, V6, P57, DOI 10.1080/00337577008235046
[13] MASTERS BJ, 1971, ION IMPLANTATION, P81
[14] A HEAT-RESISTING NEW AMORPHOUS-SILICON
MATSUMURA, H
NAKAGOME, Y
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 439 - 440
[15] MAYER JW, 1970, ION IMPLANTATION SEM, P40
[16] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES
PRUSSIN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1635 - 1642
[17] THE NATURE OF DEFECT LAYER FORMATION FOR ARSENIC ION-IMPLANTATION
PRUSSIN, S
MARGOLESE, DI
TAUBER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2316 - 2326
[18] PRUSSIN S, UNPUB
[19] RECRYSTALLIZATION OF BURIED AMORPHOUS LAYERS AND ASSOCIATED ELECTRICAL EFFECTS IN P+-IMPLANTED SI
SADANA, DK
WASHBURN, J
BOOKER, GR
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06): : 611 - 633
[20] EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI
SADANA, DK
STRATHMAN, M
WASHBURN, J
MAGEE, CW
MAENPAA, M
BOOKER, GR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 615 - 618