QUASI-BIDIMENSIONAL ELECTRONIC-PROPERTIES OF EPITAXIAL DELTA-DOPED GAAS-LAYERS

被引：7

作者：

LAVIELLE, D

PORTAL, JC

STOHR, M

NAJDA, SP

BRIGGS, A

GILLMANN, G

BOIS, P

BARBIER, E

VINTER, B

机构：

[1] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[2] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 05期

关键词：

D O I：

10.1051/rphysap:01989002405053900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：539 / 543

页数：5

共 9 条

[1] OBSERVATION OF THE QUANTUM HALL-EFFECT IN PLANAR-DOPED GAAS [J].

GILLMANN, G ;

BOIS, P ;

BARBIER, E ;

VINTER, B ;

LAVIELLE, D ;

STOHR, M ;

NAJDA, S ;

BRIGGS, A ;

PORTAL, JC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :620-622

[2]

GILLMANN G, 1988, APPL PHYS LETT, V52, P12

[3]

MAUDE DK, 1987, PHYS REV LETT, V59, P7

[4] DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION [J].

PLOOG, K .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :304-313

[5] DELTA-DOPED OHMIC CONTACTS TO N-GAAS [J].

SCHUBERT, EF ;

CUNNINGHAM, JE ;

TSANG, WT ;

CHIU, TH .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :292-294

[6] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L608-L610

[7]

ZRENNER A, 1987, GAAS REL COMP

[8]

ZRENNER A, 1987, THESIS U TECHNIQUE M

[9]

ZRENNER A, 1984, ICPS SAN FRANCISCO

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