FORMATION OF EXTENDED HYDROGEN COMPLEXES IN SILICON

被引:97
作者
ZHANG, SB
JACKSON, WB
机构
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 14期
关键词
D O I
10.1103/PhysRevB.43.12142
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have examined the nucleation and growth of hydrogen clusters using pseudopotential total-energy calculations. A double-layer {111} H platelet, resulting from clustering of diatomic H-2* complexes, is lower in energy by 0.15 eV per H pair than interstitial H-2 molecules. This result explains two experimental observations: (1) the predominance of Si-H bonding observed in Si containing high H concentrations and (2) the formation of H {111} platelets. The H vibrational frequencies, H-H separations, and other properties of the platelet are in general agreement with experiment.
引用
收藏
页码:12142 / 12145
页数:4
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