ANOMALOUS TIME-OF-FLIGHT DISTRIBUTIONS OBSERVED FOR ARGON IMPLANTED IN SILICON AND RESPUTTERED BY AR+-ION BOMBARDMENT

被引:33
作者
VANVEEN, GNA
SANDERS, FHM
DIELEMAN, J
VANVEEN, A
OOSTRA, DJ
DEVRIES, AE
机构
[1] TECH HOGESCH DELFT,INTERUNIV REACTOR INST,2629 JB DELFT,NETHERLANDS
[2] FDN FUNDAMENTAL RES MATTER,INST ATOM & MOLEC PHYS,1009 DB AMSTERDAM,NETHERLANDS
关键词
D O I
10.1103/PhysRevLett.57.739
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:739 / 742
页数:4
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