SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS MULTIQUANTUM WELLS USING HYDROGEN PLASMA PROCESSING

被引：18

作者：

HAMILTON, CJ

HICKS, SE

VOGELE, B

MARSH, JH

AITCHISON, JS

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 16期

关键词：

ION BEAM EFFECTS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method of suppressing the intermixing of GaAs/AlGaAs multiple quantum wells is outlined. The technique involves modifying the native surface oxide of gallium arsenide in a hydrogen plasma to form Ga2O3. The technique is impurity free, reproducible and area selective.

引用

收藏

页码：1393 / 1394

页数：2

相关论文

共 9 条

[1] AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS [J].

AYDIL, ES ;

GIAPIS, KP ;

GOTTSCHO, RA ;

DONNELLY, VM ;

YOON, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :195-205

[2]

HAGA T, 1989, J APPL PHYS, V66, pS809

[3] QUANTUM-WELL SHAPE MODIFICATION USING VACANCY GENERATION AND RAPID THERMAL ANNEALING [J].

KOTELES, ES ;

ELMAN, B ;

MELMAN, P ;

CHI, JY ;

ARMIENTO, CA .

OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) :S779-S787

[4] CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS TREATED BY ELECTRON-CYCLOTRON RESONANCE PLASMAS [J].

LI, PW ;

WANG, Q ;

YANG, ES .

APPLIED PHYSICS LETTERS, 1992, 60 (16) :1996-1998

[5] QUANTUM-WELL INTERMIXING [J].

MARSH, JH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :1136-1155

[6] XPS INVESTIGATION OF THE INTERACTION BETWEEN ECR-EXCITED HYDROGEN AND THE NATIVE OXIDE OF GAAS(100) [J].

MIKHAILOV, GM ;

BULKIN, PV ;

KHUDOBIN, SA ;

CHUMAKOV, AA ;

SHAPOVAL, SY .

VACUUM, 1992, 43 (03) :199-201

[7] INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING [J].

OOI, BS ;

BRYCE, AC ;

MARSH, JH .

ELECTRONICS LETTERS, 1995, 31 (06) :449-451

[8]

WA PLK, 1991, OPT QUANT ELECTRON, V23, pS925

[9] GAAS SURFACE MODIFICATION BY ROOM-TEMPERATURE HYDROGEN PLASMA PASSIVATION [J].

YOON, E ;

GOTTSCHO, RA ;

DONNELLY, VM ;

LUFTMAN, HS .

APPLIED PHYSICS LETTERS, 1992, 60 (21) :2681-2683