STRAIN EFFECTS ASSOCIATED WITH SIO LAYERS EVAPORATED ONTO GAAS

被引：2

作者：

BOOYENS, H ^{[1
]}

PROTO, GR ^{[1
]}

BASSON, JH ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.331803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5779 / 5784

页数：6

共 25 条

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