VERY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO SN-DOPED MOLECULAR-BEAM EPITAXIAL GAAS

被引：12

作者：

SHENAI, K ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1642 / 1649

页数：8

共 40 条

[1] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].

BARNES, PA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[3]

BETHE HA, 1942, MIT4312 RAD LAB REP

[4]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5] OHMIC CONTACTS TO N-TYPE GAAS [J].

BOUDVILLE, WJ ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1192-1196

[6] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[7] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[8]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[9] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[10] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

← 1 2 3 4 →