A THEORETICAL-STUDY OF THE DETERMINATION OF THE DEPTH OF A DISLOCATION BY COMBINED USE OF EBIC AND CL TECHNIQUE

被引：26

作者：

PASEMANN, L ^{[1
]}

HERGERT, W ^{[1
]}

机构：

[1] MARTIN LUTHER UNIV,SEKT PHYS,DDR-4020 HALLE,GER DEM REP

来源：

关键词：

D O I：

10.1016/0304-3991(86)90003-3

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：15 / 22

页数：8

共 12 条

[1]

BRESSE JF, 1972, 5TH P ANN SEM S, P105

[2]

DONOLATO C, 1978, OPTIK, V52, P19

[3]

DONOLATO C, UNPUB J APPL PHYS

EVERHART, TE ;

HOFF, PH .

HERGERT, W ;

PASEMANN, L .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :641-648

[6]

HEYDENREICH J, 1981, SCANNING ELECTRON MI, V1, P351

JAKUBOWICZ, A .

[8]

MADELUNG O, 1957, HDB PHYSIK, V20, P110

[9] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON [J].

PASEMANN, L ;

BLUMTRITT, H ;

GLEICHMANN, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :197-209

[10]

PASEMANN L, 1984, PHYS STATUS SOLIDI A, V84, P133, DOI 10.1002/pssa.2210840116