DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING

被引：4

作者：

LEE, JL ^{[1
]}

SHIM, KH ^{[1
]}

KIM, JS ^{[1
]}

PARK, HM ^{[1
]}

MA, DS ^{[1
]}

TANIGAWA, S ^{[1
]}

UEDONO, A ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：396 / 397

页数：2

共 10 条

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[2] DEPENDENCE OF DEEP-LEVEL PARAMETERS IN ION-IMPLANTED GAAS-MESFETS ON MATERIAL PREPARATION
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[3] A COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF SI-IMPLANTED GAAS
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[4] STAGES IN THE RECOVERY OF DEFORMED SINGLE-CRYSTALS OF IRON STUDIED BY POSITION ANNIHILATION TECHNIQUES
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[J]. MATERIALS SCIENCE AND ENGINEERING, 1986, 81 (1-2): : 379 - 390
[5] DEPTH PROFILES ON ION-IMPLANTATION INDUCED VACANCY-TYPE DEFECTS IN GAAS AND SI OBSERVED BY SLOW POSITRON
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1302 - 1304
[6] TRANSMISSION OF 1-6-KEV POSITRONS THROUGH THIN METAL-FILMS
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[J]. PHYSICAL REVIEW A, 1982, 26 (01): : 490 - 500
[7] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 120 - 123
[8] HIGH-QUALITY SI-IMPLANTED GAAS ACTIVATED BY A 2-STEP RAPID THERMAL ANNEALING TECHNIQUE
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 500 - 502
[9] EFFECT OF DOPING AND THERMAL VACANCIES ON POSITRON-ANNIHILATION IN SEMICONDUCTORS
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[J]. APPLIED PHYSICS, 1979, 18 (01): : 81 - 83
[10] A STUDY OF AGGLOMERATION AND RELEASE PROCESSES OF HELIUM IMPLANTED IN NICKEL BY A VARIABLE ENERGY POSITRON BEAM
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SAKAIRI, H
[J]. JOURNAL OF NUCLEAR MATERIALS, 1985, 133 (AUG) : 463 - 467

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