DEPENDENCE OF DEEP-LEVEL PARAMETERS IN ION-IMPLANTED GAAS-MESFETS ON MATERIAL PREPARATION

被引：15

作者：

DHAR, S

BHATTACHARYA, PK

JUANG, FY

HONG, WP

SADLER, RA

机构：

[1] UNIV CALCUTTA,INST RADIOPHYS & ELECTR,CALCUTTA 700009,W BENGAL,INDIA

[2] ITT GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 118

页数：8

共 24 条

[1] SOME PROPERTIES OF SEMI-INSULATING AND SI-IMPLANTED GAAS
BHATTACHARYA, PK
RHEE, JK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1152 - 1159
[2] DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPY
BRUNWIN, R
HAMILTON, B
JORDAN, P
PEAKER, AR
[J]. ELECTRONICS LETTERS, 1979, 15 (12) : 349 - 350
[3] ROLE OF THE PIEZOELECTRIC EFFECT IN DEVICE UNIFORMITY OF GAAS INTEGRATED-CIRCUITS
CHANG, MF
LEE, CP
ASBECK, PM
VAHRENKAMP, RP
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 279 - 281
[4] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES
CHEN, RT
HOLMES, DE
ASBECK, PM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 459 - 461
[5] ELECTRON TRAPS CREATED BY HIGH-TEMPERATURE ANNEALING IN MBE N-GAAS
DAY, DS
OBERSTAR, JD
DRUMMOND, TJ
MORKOC, H
CHO, AY
STREETMAN, BG
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) : 445 - 453
[6] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[7] HOBGOOD HM, 1980, IEEE T ELECTRON DEVI, V28, P140
[8] EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
YANG, J
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 419 - 421
[9] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS
ITOH, T
YANAI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045
[10] A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES
JANSSON, L
KUMAR, V
LEDEBO, LA
NIDEBORN, K
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 464 - 467

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