DEPENDENCE OF DEEP-LEVEL PARAMETERS IN ION-IMPLANTED GAAS-MESFETS ON MATERIAL PREPARATION

被引：15

作者：

DHAR, S

BHATTACHARYA, PK

JUANG, FY

HONG, WP

SADLER, RA

机构：

[1] UNIV CALCUTTA,INST RADIOPHYS & ELECTR,CALCUTTA 700009,W BENGAL,INDIA

[2] ITT GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 118

页数：8

共 24 条

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[16] MITONNEAU A, 1977, I PHYS C SER A, V33, P73
[17] DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1057 - 1062
[18] IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 410 - 412
[19] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
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[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +
[20] CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS-MESFETS ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATES
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