CHARACTERIZATION OF N-DOPED MGZNSSE COMPOUND SYSTEM GROWN ON INTENTIONALLY MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

ICHIMURA, Y ^{[1
]}

KISHINO, K ^{[1
]}

SATAKE, M ^{[1
]}

KURAMOTO, M ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECT & ELECTR ENGN,CHIYODA KU,TOKYO 102,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80052-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The optical and electrical characteristics of the nitrogen-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy, were systemically investigated. With increasing substrate misorientation angle (SMA), a blue-shift of the photoluminescence peak was observed for MgZnSSe and ZnSSe, indicating the increased incorporation ratio of S and Mg into crystals, With it, the net acceptor concentration (N-A-N-D) decreased in the range less than 10(17) cm(-3). On the contrary, for ''sulfur-free'' MgZnSe and ZnSe compounds, the (N-A - N-D) value was increased with SMA. This fact suggested that the presence of sulfur and the enhanced incorporation of that caused the degraded p-doping characteristics in MgZnSSe on misoriented substrates.

引用

页码：812 / 816

页数：5

共 7 条

[1] REMARKABLE REDUCTION OF THRESHOLD CURRENT-DENSITY BY SUBSTRATE MISORIENTATION EFFECTS IN 660 NM VISIBLE-LIGHT LASERS WITH GAINP BULK ACTIVE LAYERS [J].

KIKUCHI, A ;

KISHINO, K .

APPLIED PHYSICS LETTERS, 1992, 60 (09) :1046-1048

[2]

MINAGAWA S, 1989, ELECTRON LETT, V23, P413

[3] ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].

NAKAYAMA, N ;

ITOH, S ;

OHATA, T ;

NAKANO, K ;

OKUYAMA, H ;

OZAWA, M ;

ISHIBASHI, A ;

IKEDA, M ;

MORI, Y .

ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489

[4] EPITAXIAL-GROWTH OF P-TYPE ZNMGSSE [J].

OKUYAMA, H ;

KISHITA, Y ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :904-906

[5] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY [J].

QIU, J ;

DEPUYDT, JM ;

CHENG, H ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2992-2994

[6] GROWTH AND CHARACTERIZATION OF N-DOPED ZNSXSE1-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-0.3) BY MOLECULAR-BEAM EPITAXY [J].

TERAGUCHI, N ;

HIRATA, S ;

MOURI, H ;

TOMOMURA, Y ;

SUZUKI, A ;

TAKIGUCHI, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :803-806

[7]

ZHU Z, 1994, APPL PHYS LETT, V64, P1883

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