MODELING OF CHEMICAL VAPOR-DEPOSITION .3. SILICON EPITAXY FROM CHLOROSILANES

被引：11

作者：

KOREC, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90276-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：32 / 44

页数：13

共 28 条

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