REFRACTIVE-INDEX CHANGES FORMED BY N+ IMPLANTS IN SILICA

被引：13

作者：

FAIK, AB ^{[1
]}

CHANDLER, PJ ^{[1
]}

TOWNSEND, PD ^{[1
]}

WEBB, R ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1986年 / 98卷 / 1-4期

关键词：

D O I：

10.1080/00337578608206114

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：233 / 241

页数：9

共 20 条

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[5] COMPACTION OF ION-IMPLANTED FUSED SILICA
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[6] EERNISSE EP, 1974, J APPL PHYS, V45, P3876
[7] FAIK AB, 1984, THESIS SUSSEX
[8] REFRACTIVE-INDEX PROFILES OF ION-IMPLANTED FUSED-SILICA
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[9] INDEX PROFILES OF PLANAR OPTICAL-WAVEGUIDES DETERMINED FROM ANGULAR-DEPENDENCE OF REFLECTIVITY
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (07) : 501 - 506
[10] THE OPTICAL-PROPERTIES OF SIOX FORMED BY HIGH-DOSE SI ION-IMPLANTATION INTO FUSED-SILICA
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4): : 235 - 246