THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VAPOR-PHASE EPITAXY

[11] HIRTZ JP, 1981, I PHYS C SER, V56, P29

[12] INVESTIGATIONS ON LOW-TEMPERATURE MO-CVD GROWTH OF GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) : 215 - 222

[13] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[14] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) : 1051 - 1068

[15] THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 59 - 73

[16] MORI Y, 1981, J APPL PHYS, V52, P2972

[17] MOSS RH, 1982, ELECTRONIC MATERIALS

[18] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[19] SAMUELSON L, 1982, P INT M EPITAXIAL GR

[20] STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 58 - 63

[11] HIRTZ JP, 1981, I PHYS C SER, V56, P29

[12] INVESTIGATIONS ON LOW-TEMPERATURE MO-CVD GROWTH OF GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (01) : 215 - 222

[13] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 145 - 153

[14] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) : 1051 - 1068

[15] THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) : 59 - 73

[16] MORI Y, 1981, J APPL PHYS, V52, P2972

[17] MOSS RH, 1982, ELECTRONIC MATERIALS

[18] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[19] SAMUELSON L, 1982, P INT M EPITAXIAL GR

[20] STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 58 - 63