CHANGES IN RESISTIVITY AND COMPOSITION OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE FILMS BY ANNEALING

被引：17

作者：

SHIOYA, Y

ITOH, T

KOBAYASHI, I

MAEDA, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 07期

关键词：

D O I：

10.1149/1.2108938

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1475 / 1479

页数：5

共 12 条

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