ANALYSIS OF DIODE-LASER PROPERTIES

被引：23

作者：

STREIFER, W

SCIFRES, DR

BURNHAM, RD

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 11期

关键词：

D O I：

10.1109/JQE.1982.1071453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1918 / 1929

页数：12

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共 18 条

[11] CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS
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[12] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING
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[J]. Soviet Journal of Quantum Electronics (English translation of Kvantovaya Elektronika), 1973, 2 (05): : 464 - 466
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SAITO, K
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215
[16] ANALYSIS OF SPONTANEOUS EMISSION EFFECTS ON SPECTRA AND L-CHARACTERISTICS VS I-CHARACTERISTICS OF DIODE-LASERS
STREIFER, W
SCIFRES, DR
BURNHAM, RD
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L282 - L284
[17] LONGITUDINAL MODE SPECTRA OF DIODE-LASERS
STREIFER, W
SCIFRES, DR
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 305 - 307
[18] SPONTANEOUS EMISSION FACTOR OF NARROW-STRIPE GAIN-GUIDED DIODE-LASERS
STREIFER, W
SCIFRES, DR
BURNHAM, RD
[J]. ELECTRONICS LETTERS, 1981, 17 (24) : 933 - 934