NONEQUIVALENT HETEROINTERFACES IN AIGAAS/GAAS DOUBLE BARRIER RESONANT TUNNELING DIODES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：4

作者：

TEWS, H

SCHNELL, RD

NEUMANN, R

机构：

[1] Siemens Research Lab, Germany

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 25期

关键词：

Semiconducting Aluminum Compounds--Growth;

D O I：

10.1049/el:19891143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The peak/valley current ratio of AlGaAs/GaAs double barrier resonant tunnelling diodes at room temperature is found to be very sensitive to the quality of the GaAs/AlGaAs interface, while the AlGaAs/GaAs interface is much less critical.

引用

页码：1709 / 1711

页数：3

共 5 条

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BIMBERG, D ;

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MARS, DE ;

MILLER, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197

[2] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

FISCHER, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

[3] ROOM-TEMPERATURE OPERATION OF ALGAAS/GAAS RESONANT TUNNELLING STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SCHNELL, RD ;

TEWS, H ;

NEUMANN, R .

ELECTRONICS LETTERS, 1989, 25 (13) :830-831

[4]

SCHNELL RD, IN PRESS I PHYS C SE

[5] PRECISE CONTROL OF RESONANT TUNNELING CURRENT IN ALAS/GAAS/ALAS DOUBLE BARRIER DIODES WITH ATOMICALLY-CONTROLLED BARRIER WIDTHS [J].

TSUCHIYA, M ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L185-L187

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