ROOM-TEMPERATURE OPERATION OF ALGAAS/GAAS RESONANT TUNNELLING STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：6

作者：

SCHNELL, RD

TEWS, H

NEUMANN, R

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 13期

关键词：

D O I：

10.1049/el:19890559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：830 / 831

页数：2

共 8 条

[1]

Bate R. T., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P26, DOI 10.1117/12.940817

[2] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].

BROEKAERT, TPE ;

LEE, W ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547

[3] RESONANT TUNNELLING IN ALLNAS/GAINAS DOUBLE BARRIER DIODES GROWN BY MOCVD [J].

HODSON, PD ;

ROBBINS, DJ ;

WALLIS, RH ;

DAVIES, JI ;

MARSHALL, AC .

ELECTRONICS LETTERS, 1988, 24 (03) :187-188

[4] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[5] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

OHNISHI, H ;

YOKOYAMA, N ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579

[6] RESONANT TUNNELING TRANSPORT AT 300-K IN GAAS-ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAY, S ;

RUDEN, P ;

SOKOLOV, V ;

KOLBAS, R ;

BOONSTRA, T ;

WILLIAMS, J .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1666-1668

[7] PRECISE CONTROL OF RESONANT TUNNELING CURRENT IN ALAS/GAAS/ALAS DOUBLE BARRIER DIODES WITH ATOMICALLY-CONTROLLED BARRIER WIDTHS [J].

TSUCHIYA, M ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L185-L187

[8] VERY STABLE GE/AU/CR/AU OHMIC CONTACTS TO GAAS [J].

WILLER, J ;

RISTOW, D ;

KELLNER, W ;

OPPOLZER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :179-181

← 1 →