SIMPLE-MODEL FOR ETCHING

[1] BARBER MN, 1970, RANDOM RESTRICTED WA, pCH7

[2] MEASUREMENT OF RMS ROUGHNESS, AUTOCOVARIANCE FUNCTION AND OTHER STATISTICAL PROPERTIES OF OPTICAL SURFACES USING A FECO SCANNING INTERFEROMETER [J]. APPLIED OPTICS, 1976, 15 (11): : 2705 - 2721

[3] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &

[4] SCALING PROPERTIES OF THE SURFACE OF THE EDEN MODEL IN D = 2, 3, 4 [J]. JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (12): : 2279 - 2287

[5] MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1015 - 1024

[6] Mandelbrot B.B., 1983, FRACTAL GEOMETRY NAT

[7] MODELING ION MILLING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1767 - 1771

[8] A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1455 - 1459

[9] PRICE JB, 1973, SEMICONDUCTOR SILICO

[10] REYNOLDS JL, 1980, J VAC SCI TECHNOL, V16, P1772

[1] BARBER MN, 1970, RANDOM RESTRICTED WA, pCH7

[2] MEASUREMENT OF RMS ROUGHNESS, AUTOCOVARIANCE FUNCTION AND OTHER STATISTICAL PROPERTIES OF OPTICAL SURFACES USING A FECO SCANNING INTERFEROMETER [J]. APPLIED OPTICS, 1976, 15 (11): : 2705 - 2721

[3] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &

[4] SCALING PROPERTIES OF THE SURFACE OF THE EDEN MODEL IN D = 2, 3, 4 [J]. JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (12): : 2279 - 2287

[5] MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1015 - 1024

[6] Mandelbrot B.B., 1983, FRACTAL GEOMETRY NAT

[7] MODELING ION MILLING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1767 - 1771

[8] A GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .2. APPLICATION TO DEPOSITION AND ETCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1455 - 1459

[9] PRICE JB, 1973, SEMICONDUCTOR SILICO

[10] REYNOLDS JL, 1980, J VAC SCI TECHNOL, V16, P1772