SILICON-ON-INSULATOR STRUCTURES BY SIMOX AND SIMNI PROCEDURES STUDIED BY RAMAN-SCATTERING AND RUTHERFORD BACKSCATTERING

被引：11

作者：

TAKAI, M

RYSSEL, H

SCHORK, R

UEYAMA, N

MINAMISONO, T

NAMBA, S

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

[3] OSAKA UNIV,FAC SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90813-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：400 / 404

页数：5

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