SHALLOW DONOR IN SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES REVEALED BY ELECTRIC-FIELD MODULATED ELECTRON-SPIN-RESONANCE

Electric-field modulated K-band election spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX) were carried out at 4.3-30 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity loading. Sweeping of the Si band gap through the Fermi level near the buried oxide interfaces resulted in the observation of a shallow donor in Si of fairly high local density (almost-equal-to 10(18) cm-3), residing in this area; its electron spin resonance signal is turned on and off by positive and negative gate biasing, respectively, The same donor signal has previously been observed in gamma-irradiated SIMOX, revealing that gamma irradiation has the same effect as positive biasing.