ELECTRICAL-PROPERTIES OF OXYGEN THERMAL DONORS IN SILICON FILMS SYNTHESIZED BY OXYGEN IMPLANTATION

被引：10

作者：

VETTESE, F

SICART, J

ROBERT, JL

CRISTOLOVEANU, S

BRUEL, M

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,INPG,PHYS COMPOSANTS SEMICOND LAB,UA 840,F-38031 GRENOBLE,FRANCE

[2] CEN,ETUD & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1208 / 1212

页数：5

共 21 条

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