A VARIETY OF OXYGEN-INDUCED RECOMBINATION CENTERS IN 450-DEGREES-C TO 600-DEGREES-C HEAT-TREATED SILICON

被引：4

作者：

GLINCHUK, KD

LITOVCHENKO, NM

PTITSIN, VY

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssa.2210930221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：565 / 571

页数：7

共 16 条

[1] ON THE PROPERTIES OF THERMODONORS-II IN CZ-SI CRYSTALS OF HIGH-CARBON CONTENT [J].

BABICH, VM ;

BARAN, NP ;

BUGAI, AA ;

DOTSENKO, YP ;

KOVALCHUK, VB ;

SHERSHEL, VA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02) :679-683

[2] NEW OXYGEN-INDUCED RECOMBINATION CENTERS 600-DEGREES-C TO 800-DEGREES-C HEAT-TREATED SILICON [J].

BORIMSKII, VV ;

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIC, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (01) :237-241

[3] INFLUENCE OF CARBON AND PREANNEALING ON THE FORMATION OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

BORIMSKII, VV ;

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02) :623-627

[4] ANNEALING BEHAVIOR OF OXYGEN-INDUCED RECOMBINATION CENTERS IN SILICON [J].

BORIMSKII, VV ;

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :343-348

[5] ELECTRICAL-PROPERTIES OF THERMAL DONORS FORMED IN CZ-SI DURING HEAT-TREATMENT AT 450-DEGREES-C [J].

EMTSEV, VV ;

DALUDA, YN ;

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :575-584

[6] INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS [J].

GAWORZEWSKI, P ;

HILD, E ;

KIRSCHT, FG ;

VECSERNYES, L .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01) :133-147

[7] STRUCTURE AND FORMATION KINETICS OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :83-87

[8] TRAP SPECTRUM OF THE NEW OXYGEN DONOR IN SILICON [J].

HOLZLEIN, K ;

PENSL, G ;

SCHULZ, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :155-161

[9] PRESSURE-DEPENDENCE OF OXYGEN-RELATED DEFECT LEVELS IN SILICON [J].

KELLER, WW .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3471-3477

[10] LUMINESCENCE OF CARBON AND OXYGEN RELATED COMPLEXES IN ANNEALED SILICON [J].

MAGNEA, N ;

LAZRAK, A ;

PAUTRAT, JL .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :60-62

← 1 2 →